Breaking Through 14 Inches: Domestic Semiconductor Companies Bring Good News! Chip Heat Dissipation Also Makes Big Moves

Two silicon carbide companies have announced major news.

Domestic Silicon Carbide Breaks Through 14 Inches

On March 11, Tiancheng Semiconductor’s official WeChat account announced that, relying on its self-developed equipment, it successfully produced 14-inch silicon carbide single crystal materials with an effective thickness of 30mm.

This breakthrough not only fills a technological gap in the domestic field but also marks China’s silicon carbide industry officially moving from “12-inch popularization” to “14-inch breakthrough” in large-size materials.

Image source: Tiancheng Semiconductor official WeChat

This 14-inch product is mainly used in silicon carbide components for semiconductor manufacturing equipment, successfully breaking the monopoly of Japanese, Korean, and European companies in this field. It signifies a key breakthrough for domestic companies in large-size silicon carbide technology and adds a new variable to the global silicon carbide semiconductor industry landscape.

Tiancheng Semiconductor is a well-known domestic silicon carbide company. By 2025, it aims to master dual mature processes for 12-inch high-purity semi-insulating and N-type single crystal growth, with 12-inch N-type silicon carbide single crystal crystal thickness exceeding 35mm.

Large-size silicon carbide substrates can significantly reduce costs, improve yield, and adapt to high-end devices, which are critical for the scale-up of third-generation semiconductor industries. The area of a 12-inch substrate is about four times that of a 6-inch, with chip output being 3.8 to 4.4 times that of 6-inch wafers. The 14-inch will further amplify this effect.

Currently, mainstream silicon carbide manufacturers are still at the 6-inch stage, with 8-inch rapidly increasing. However, recently, several domestic silicon carbide companies announced breakthroughs in large-size upgrades.

San’an Optoelectronics stated on March 2 on an investor interaction platform that its 12-inch silicon carbide substrates have been sent to customers for sample verification.

On February 22, Luxiao Technology announced that it had produced its first 12-inch silicon carbide single crystal sample, completing the full process development and testing from crystal growth to substrate.

On January 23, Haimeixing’s subsidiary Haimeixinwei successfully developed 12-inch silicon carbide single crystal ingots, completing full-size crystal growth technology layout for 6-inch, 8-inch, and 12-inch wafers.

In September 2025, Jing Sheng Electric’s first 12-inch silicon carbide substrate pilot line was officially put into operation at its subsidiary Zhejiang Jingrui SuperSiC.

Tianyue Advanced previously stated on an investor interaction platform that the company has launched a full series of 12-inch substrates (semi-insulating/conductive P-type/conductive N-type).

Wolfspeed Launches Advanced Silicon Carbide Packaging Platform

On March 12, Wolfspeed, a globally renowned silicon carbide company, announced on its official WeChat that it recently launched a new generation AI data center advanced packaging platform based on 300mm silicon carbide technology, providing scalable base materials for advanced AI and high-performance computing packaging solutions.

As AI workloads rapidly increase, data center integration is pushing packaging size, power density, and functional complexity to the limits of traditional materials, with growing demands for packaging size, power density, and integration complexity.

The company’s CTO stated that this platform aims to combine silicon carbide’s material advantages with industry-standard manufacturing infrastructure and expand solutions for next-generation AI and high-performance computing packaging architectures.

Wolfspeed is collaborating with wafer fabs, OSAT (outsourced semiconductor assembly and test) providers, system architects, and other ecosystem partners to verify technical feasibility, reliability, and integration pathways, promoting the implementation of hybrid silicon carbide-silicon packaging architectures.

Image source: Wolfspeed official WeChat

Silicon carbide used in advanced packaging mainly addresses the high heat dissipation issues of GPU chips. Previously, media reported that NVIDIA plans to replace the intermediary layer material in its new Rubin processor’s CoWoS advanced packaging process from silicon to 12-inch silicon carbide substrates, aiming to solve the heat management, structural reliability, and interconnect density bottlenecks of the Rubin platform’s 1000W power consumption and high-density chiplet packaging, with a rollout expected by 2027.

Core Materials of the Third Generation Semiconductor

As a key representative of third-generation semiconductors, silicon carbide has 10 times the breakdown electric field strength, 3 times the bandgap width, 2 times the maximum operating temperature, 2 times the saturation electron drift rate, and 3 times the thermal conductivity compared to silicon. Thanks to its unique material properties, silicon carbide is gradually breaking through the performance bottlenecks of traditional silicon-based semiconductors, becoming a critical core material in new energy vehicles, photovoltaics and energy storage, AI computing, and high-end industrial applications.

ICwise Consulting’s “2025 China Third-Generation Semiconductor Industry Listed Company Research Report” shows that in 2024, the global silicon carbide power semiconductor device market was valued at $2.6 billion, with expected global sales reaching $13.6 billion by 2029, at a compound annual growth rate of 39.9%.

According to Securities Times Data Bao, there are over 20 A-share silicon carbide concept stocks. Currently, 14 companies have released 2025 performance forecasts, but overall performance is poor, with 7 companies reporting losses. Only a few, such as Silan Micro, Wenzhou Hongfeng, and Vico Precision, show growth.

The main reason for the performance decline is fierce domestic market competition. Tianyue Advanced stated in its earnings forecast that increased competition in the domestic silicon carbide substrate industry has led the company to implement phased market strategies to expand market share and consolidate industry position, resulting in a decline in average product sales prices and a year-on-year decrease in overall revenue.

From institutional ratings, 16 stocks have received attention from institutions, with Yangjie Technology, Jing Sheng Electric, CR Micro, and Starnet Semiconductor among the most followed, each with five or more institutions.

Lian Micro, Tianyue Advanced, Haimeixing, and Jing Sheng Co. are the most favored, with institutions unanimously predicting over 100% average growth in performance over the next two years.

(Source: Data Bao)