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STMicroelectronics unveils second‑generation MasterGaN power IC
STMicroelectronics has launched MasterGaN6, the first device in its second-generation MasterGaN half-bridge family, expanding its GaN-based power device portfolio. This new integrated power package features an updated BCD driver and a high-performance gallium nitride (GaN) transistor with 140mΩ on-resistance, offering enhanced capabilities like fault indication and standby operation. Designed for both consumer and industrial applications, MasterGaN6 aims to simplify designs, reduce component count, and improve power efficiency.